摘要
减反射膜层折射率和厚度的精密监控是超辐射发光管的关键技术。分析了超辐射发光管端面减反射膜的四种膜系,提出了监控薄膜厚度的挡板调制、高级次过正极值法。采用该法制备超低剩余反射膜的实验表明:单面镀膜后,砷化镓基片的剩余反射率达到0.04%;管芯的反馈谐振被抑制,出现超辐射现象,峰值波长从1610nm移动到1560nm,蓝移约60nm,光谱纹波小于0.3dB。
The index of refraction and the layer thickness of single-layer coatings have to be strict controlled to meet for producing a high-quality single-layer antireflection coating on laser diodes facets. Analysised the facet antireflection coating of superluminescent diode. A mask modulator method combining multi-order, overshoot quantities of turning point monitoring technique are described. One facet coated LDs is driven and ASE spectra are measured. The residual reflectivity of coated GaAs is about 0.04%, the center wavelength shifts about 60 nm from 1610 nm to 1560 nm and the ripple in the gain is less than 0. 3 dB.
出处
《光学仪器》
2006年第4期159-163,共5页
Optical Instruments
关键词
减反射膜
挡板调制法
超辐射发光管
antireflection coating
mask modulator method
superluminescent diode
