摘要
非晶硅薄膜晶体管由于其较高的沟道电流温度系数而被用于非致冷型红外探测器。在工艺参数仿真的基础上成功地研制了离子注入型背栅非晶薄膜晶体管,并得到了典型的输出特性。制作出的晶体管具有较高的沟道电流温度变化系数,而且制作过程简单,并能与常规IC工艺兼容,制作温度不超过300℃。
Because of high temperature coefficient of drain current （TCC）,a-Si thin film transistor （TFT） has been applied to uncooled infrared sensors. The ion implanted bottom-gate aSi TFT has been successfully fabricated on the basis of fabrication simulation. Typical output characteristics and quite high TCC are achieved. The process is simple and compatible with the usual fabrication of ICs. The temperature of the whole process is no more than 300 ℃.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2006年第4期393-395,401,共4页
Semiconductor Optoelectronics
关键词
薄膜晶体管
非晶硅
离子注入
thin film transistor
amorphous silicon
ion implantation
