摘要
提出了一种新型具有掩埋电极的金属-半导体-金属(MSM)探测器原型器件结构,并用数值计算的方法研究了其激活层内电场的分布特性,讨论了掩埋电极深度对电场分布的影响,并与传统平面叉指电极结构进行比较,得出该结构对器件性能改善具有重要的作用。
A new type metal-semiconductor-metal(MSM) detector with recessed interdigital electrodes is proposed. The electric field distribution in active layer is simulated using numerical methods. The effect of depth of the electrodes is analyzed through computer simulation. The dissimilarity of the MSM detectors with and without recessed interdigital electrodes is discussed. The results are significant in improving the performances of MSM photodetectors and optimizing the design of the structure.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2006年第4期416-418,共3页
Semiconductor Optoelectronics