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BCD工艺概述 被引量：7

Overview of BCD Process
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摘要 介绍了BCD(bipolarCMOSDMOS)的工艺原理、特点和发展前景。对BCD工艺兼容性进行了说明,着重阐述了LDMOS的工艺原理和关键工艺设计考虑。文章结合应用,指出BCD工艺朝着高压、高功率、高密度三个主要方向分化发展,并对BCD工艺的最新进展作了概述。对电源管理和显示驱动这两大市场驱动进行了分析,并对国内企业进入该领域所面临的机会与挑战作了阐述与展望。 The principle, characteristics and the prospect of the BCD process were presented. The compatibility of BCD process integration was discussed. We focused on the principle and concerns on LDMOS technology. The splitting of BCD technology into three main directions of high voltage, high power and high density combining with the applications were introduced. The update developments of the BCD process was also presented. The two marketing trends of the power management and the display driver IC were introduced. The chance and the challenges to Chinese company going into this hopeful field were also discussed.
作者 陈志勇 黄其煜 龚大卫
机构地区 上海交通大学微电子学院 上海先进半导体制造股份有限公司
出处 《半导体技术》 CAS CSCD 北大核心 2006年第9期641-644,659,共5页 Semiconductor Technology
关键词 BCD工艺 双扩散金属氧化物半导体管 模块化 高压 高密度 BCD process DMOS modularization high voltage high density
分类号 TN305.7 [电子电信—物理电子学]
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参考文献12

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共引文献3

同被引文献28

  • 1谭开洲,冯建,刘勇,徐世六,杨谟华,李肇基,张正璠,刘玉奎,何开全.一种新型半绝缘键合SOI结构[J].Journal of Semiconductors,2006,27(10):1828-1831. 被引量：2
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引证文献7

二级引证文献6

半导体技术
2006年 第9期

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