硼碳氮薄膜的内应力研究

Inner Stress of Boron Carbon Nitride Thin Films

采用射频磁控溅射技术制备出硼碳氮(BCN)薄膜。傅里叶红外吸收光谱(FTIR)测量发现样品的组成原子之间实现了原子级化合,扫描电子显微镜(SEM)测量发现样品与衬底间存在较大的内应力。样品剥落后,应力的消除使红外吸收峰向低波数移动。实验还发现,对新制备的硼碳氮薄膜进行600℃热处理能有效释放薄膜中的压应力。

Boron carbon nitride （BCN） thin films were deposited by radio frequency （RF） magnetron sputtering. Fourier transform infrared absorption spectrum （FTIR） measurement shows that B, C and N three type atoms have finished atomic -level hybrid and there is a larger inner stress between the films and substrate. When the films were peeled off from the substrate, stress relaxed and the FTIR absorption peaks shifted to lower wave numbers. Also, annealing at 600℃ is a feasible method to relax the stress for newly deposited.