摘要
在本文的工中.对于加速层我们分别研究了SiO2和ZnS两种材料的加速作用及采用这两种材料作为加速层的器件的传导电荷情况,实验结果表明ZnS作加速层的电荷注入能力优于SiO2作加速层;但是后者对热电子的加速作用明显优于前者,而且在同等条件下,以SiO2作加速层的器件的亮度明显高于ZnS作加速层的器件。
in this paper, we studied the accelerating action of SiO2 and Zns respectively. We also investigated the luminacnce and the transferred charge of the TFEL devices with these two materials as accelerating layers. The experimental result indicates that SiO2 layer's accelerating action on the hot electrons is abviously greaterthan ZnS's. The brightness of the device with SiO2 as accelerating layer is much higher than that of the ZnS-accelerating-layer device.
出处
《光电子.激光》
EI
CAS
CSCD
北大核心
1996年第6期370-372,317,共4页
Journal of Optoelectronics·Laser