提高晶体管振荡电路性能的设计与理论分析

DESIGN AND THEORETICAL ANALYSIS FOR INCREASING THE CHARACTER OF OSCILLATORY CIRCUIT OF TRANSISTOR

引用晶体管静态工作点与ｈ参数的关系曲线，分析了静态参量ＩＣ、ＶＣＥ对振荡电路频率稳定、起振、振荡频率的影响。指出恰当地选取静态ＩＣ、ＶＣＥ将改善振荡器的工作。

The relation curve of static working point and parameter h is introduced in this paper. It point out that approprite static IC and VCE will improve the working position of oscillator.