摘要
在蓝宝石(0001)衬底上采用金属有机化学气相淀积(MOCVD)方法生长了掺Si的n型A l0.45Ga0.55N外延层,透射光谱表明材料对280nm以前紫外光显著吸收;双晶摇摆曲线表明材料存在大量缺陷。用此材料制作了光电导探测器,结合材料讨论了持续光电导效应的产生机理。
The Si doped n-Al0.45Ga0.55 N epilayers have been grown on sapphire （0001） substrate by metal organic chemical vapor deposition. The transmittance measurement indicates that the materials absorb ultraviolet radiation above 280nm notablely and the rocking curve of the AlGaN epitaxial material shows that there are abundant dislocations. Photoconductive detectors are fabricated on the material and the mechanism of photoconductor in AlGaN is discussed
出处
《激光与红外》
CAS
CSCD
北大核心
2006年第9期868-870,共3页
Laser & Infrared
