Ga_2O_3氮化法合成GaN粉体的研究

Synthesis of GaN Powder by Directly Nitriding Ga_2O_3

在管式电炉中,采用Ga2O3与NH3高温常压下反应生成了GaN粉体。通过XRD和AFM对生成物进行了分析,并研究了各种工艺参数如反应温度、保温时间、NH3的流量及反应气氛等因素对生成GaN粉体的影响。结果表明用高纯Ga2O3与NH3在温度为1100℃,NH3流量为26L/h时能够合成高纯度的六方GaN粉体。

GaN powders were fabricated by gas nitriding of Ga2O3 in the tube furnace. The samples were characterized by XRD and AFM, and the processing parameters such as the reaction temperature, the holding time, the NH3 flow rate, and the reaction atmosphere were investigated as well. The result showed that the highly pure GaN powders could be synthesized at 1100℃ by directly nitriding Ga2O3 with NH3.