脉冲激光沉积β-FeSi_2/Si(111)薄膜的工艺条件

β-FeSi_2/Si(111) Thin Films Prepared by Pulsed Laser Deposition

用FeSi2合金靶作为靶材，采用准分子激光沉积法在Si（111）单晶基片上制备了单相的p-FeSi2薄膜，并将飞秒脉冲激光沉积法（PLD）引入到β-FeSi2薄膜的制备工艺中；用X射线衍射仪（XRD），场扫描电镜（FSEM），能谱仪（EDS），紫外可见光光谱仪研究了薄膜的结构、组分、表面形貌和光学性能。基片温度为500℃，采用KrF准分子脉冲激光沉积法可获得单相的β-FeSi2薄膜。衬底温度为550℃时，β-FeSi2出现迷津状薄层。采用飞秒脉冲激光法β-FeSi2薄膜的合成温度比准分子脉冲激光沉积法制备温度低50～100℃；薄膜的晶粒分布均匀连续，没有微米级的微滴；飞秒脉冲激光沉积效率比准分子激光的高1000倍以上，是一种快速高效的β-FeSi2薄膜沉积技术。

The even single phase β-FeSia thin films were prepared by femtosecond pulsed laser deposition （PLD） on Si（lll） wafers at different temperature using an FeSi2 alloy target, and excimer （nanosecond） PLD was introduced to prepared β-FeSi2 thin films also. X-ray diffraction （XRD）, field scanning electron microscopy （FSEM）, energy disperse spectroscopy （EDS）, ultraviolet-visible spectra photometer were used to characterize the structure, composition and morphology of the films. The micro drop appeared in the both samples prepared by nanosecond PLD at 500 ℃ and 550 ℃, the maze surface appeared in the surface of the sample prepared at 550 ℃. The single phase β-FeSi2 thin films were gained by femtosecond PLD below 400 ℃, but the proper temperature of nanosecond PLD was 500 ℃ ; The β-FeSi2 thin films prepared by femtosecond PLD were free of micro drop, the deposition efficiency at unit average laser power in the process of depositing β-FeSi2 thin films by the femtosecond PLD system was 1000 times over that of the nanosecond PLD system.