摘要
在分析金属薄膜磁电阻传感器非线性产生原因的基础上,提出了几种设计AMR(各向异性磁电阻)薄膜磁电阻传感器时改善其线性度的方法.用直流磁控溅射方法制备了Ni80Fe20和Ni65Co35AMR薄膜材料;用微加工工艺制做出了几种AMR传感器元件,并给出了测试结果.
Several methods to improve the linearity of anisotropic magnetoresistance (AMR) sensors were suggested based on the analysis of the generation of nonlinearity in magnetoresistive sensors of metallic films. Ni80Fe20 and Ni65Co35 AMR thin films were prepared by DC magnetic sputtering. Some AMR sensors were made by the micro-fabrication technique, and the testing results were also presented.
出处
《北京科技大学学报》
EI
CAS
CSCD
北大核心
2006年第8期744-749,共6页
Journal of University of Science and Technology Beijing
基金
国家高技术研究"863计划"资助项目(No.2003AA325010)
关键词
金属薄膜
各向异性磁电阻效应
传感器
线性度
微加工
metallic films
anisotropic magnetoresistance effects
sensor
linearity
microfabrication