摘要
掺氮直拉硅单晶近年来引起了硅材料产业界和学术界的广泛关注。氧沉淀是直拉硅单晶缺陷工程的重要研究课题。对掺氮直拉硅单晶氧沉淀研究的最新进展进行了综述,主要阐述了氮是如何影响直拉单晶硅中原生氧沉淀、后续热工艺中氧沉淀行为以及氧沉淀的形貌。
In recent years, nitrogen-doped czochralski silicon （NCZ）has attracted intensive attention from the industrial circle and academia. Oxygen precipitation is an important subject of defect engineering for CZ silicon. This paper overviews the latest achievements in the research of oxygen precipitation in NCZ silicon. The effects of nitrogen on the formation of grown-in oxygen precipitates, oxygen precipitates formed in the subsequent thermal cycles and the morphology of oxygen precipitates in NCZ silicon are elucidated in detail, thus the advantages of NCZ silicon are revealed.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2006年第9期5-8,12,共5页
Materials Reports
基金
教育部"新世纪优秀人才支持计划"(NCET-04-0537)
国家自然科学基金(No.60225010)
