A Radial Stub Test Circuit for Microwave Power Devices

微波功率器件的扇形线测试电路(英文)

With the principles of microwave circuits and semiconductor device physics, two microwave power device test circuits combined with a test fixture are designed and simulated, whose properties are evaluated by a parameter network analyzer within the frequency range from 3 to 8GHz. The simulation and experimental results verify that the test circuit with a radial stub is better than that without. As an example, a C-band AlGaN/GaN HEMT microwave power device is tested with the designed circuit and fixture. With a 5.4GHz microwave input signal,the maximum gain is 8.75dB,and the maximum output power is 33.2dBm.

在微波电路原理和半导体器件物理的基础上，设计和模拟了两种用于微波功率器件的测试电路，并且设计了与之配套的测试夹具．采用矢量网络分析仪对该测试电路和夹具在3-8GHz范围内进行了小信号测试．模拟和测试结果都表明，采用扇形线的测试电路性能较好．最后采用该电路和夹具对C波段AlGaN／GaN HEMT微波功率器件进行了微波功率测试，测试频率为5．4GHz．实验测得最大功率增益为8．75dB，最大输出功率为33．2dBm。