摘要
应用改进的超突变结变容管杂质分布模型,对以杂质分布的不同参数值为特征的容压变化指数n进行了数值计算并绘成了关系曲线图。
C-V index n for a improved impurity profile model of hyperabrupt Visractors has been computed numerically for differnt values of the parameters characterizing impurity profile and this results have been ploted graphically.The applications of the result in the design of varactors has been indicated.
出处
《微电子学与计算机》
CSCD
北大核心
1996年第2期11-12,56,共3页
Microelectronics & Computer
基金
自然科学基金