摘要
报导砷化镓激光器阵列的实验结果。该阵列光束的脉宽约０．７～５ｎｓ，近场光斑面积约１００ｍｍ×６ｍｍ；已被用于触发高功率电磁脉冲发生器中的半导体光导开关阵列。报导一种提高光脉冲重复率的方法—双脉冲序列法，用该方法使激光脉冲等效重复率达约１００ＭＨｚ；介绍一种使激光器阵列输出光斑中光能均匀分布的多光束叠加方案。
In this paper the experimental results of laser arrays are reported for trigger photoconductive semiconductor switch array in the electromagnetic pulse generator. The GaAs laser arrays output pulse with full Width at half maximum of 0.7～5ns and the beam's area of about 100mm×6mm.The effective repetition rate of double peak-pulse serials is about 100MHz.The superposition method of multi-beam is described.
出处
《强激光与粒子束》
EI
CAS
CSCD
1996年第4期530-534,共5页
High Power Laser and Particle Beams
基金
光华基金
关键词
激光器阵列
纳秒脉冲技术
半导体激光
laser array,semiconductor laser,nanosecond pulse,photoconductive semiconductor switches,high-power microweves
