摘要
在具有CeO2隔离层的Si基片上获得了较高质量的YBa2Cu3O7-x(YBCO)高温超导薄膜。在零磁场下,77K时其临界电流密度达到1×106A/cm2。研究发现,YBCO的(001)面平行于Si基片的(100)面,而CeO2过渡层由许多约40nm×100nm的细小CeO2晶粒组成,其取向呈散乱分布。尽管CeO2和Si之间的晶格错配很小(约0.4%),CeO2却不能在Si上外延生长,而YBCO却能在取向凌乱的CeO2上形成[001]择优取向。CeO2和Si的界面处有一层极薄的过度层。YBCO和CeO2界面存在Y2BaCuO5(211相)。在YBCO薄膜中观察到有与123相混生的248相。
YBa2Cu3O7-x (YBCO ) thin film has been deposited on Si substrate with CeO2 buffer layer. It shows a high critical transport current density Jc exceeding 1. 0 × 106 A/cm2 at 77 K in zero magnetic field. The orientation relationship of the multilayer film has been studied: The(001) plane of YBCO film is parallel to the(100) plane of St substrate and the CeO2buffer layer consists of many small(40 nm × 100 nm) column-like crystal grains with different orientations. Although the lattice mismatch between CeO2 and Si is very small (about 4% ),CeO2 can not grow epitaxilly on St substrate, while YBCO can grow with c orient preference on scattered oriented CeO2 because of habit growth. A very thin layer exists between Si and CeO2.Several Y2BaCuO5(211 phase) grains exist in the interface of CeO2 and YBCO.
出处
《中国稀土学报》
CAS
CSCD
北大核心
1996年第3期234-238,共5页
Journal of the Chinese Society of Rare Earths