氧化锡纳米线的拉曼光谱和光致发光光谱研究

Study on Raman Spectra and Photoluminescence of SnO_2 Nanowires

用表面限制剂对水热法生成的前驱物加以限制生长的方法成功制备了氧化锡纳米线结构,TEM和HRTEM的结果表明该纳米线由沿[001]方向生长的氧化锡单晶组成,纳米线直径在5-10纳米、长度100-500纳米。利用拉曼光谱和发光光谱对其生长过程和发光现象进行了详细的研究,结果表明,细长的氧化锡纳米线出现356、515、691 cm-1新的拉曼振动模以及600 nm较强的光致发光。

SnO2 nanowires with diameters 5 - 10 nm and length 100 - 500 nm were prepared using a surfactant - mediated approach based on hydrothermal - synthesized precursor. TEM images show that the nanowires are uniform along [001 ] direction. Three new Raman lines at 358, 514 and 691 cm^-1 were recorded and a strong photoluminescence band located at -600 nm were observed at room temperature, notably different characters from the SnO2 bulk.