半导体保护器件阴极短路区的设计

Design of Cathode Short Section of Semi conductor Protection Device

为改善半导体保护器件的主要特性参数,通过对半导体保护器件基本原理的简单论述,深入研究了阴极短路结构的相关理论,分析了阴极短路区结构和工艺对半导体保护器件主要特性参数的影响,提出了优化半导体保护器件主要特性参数的一些方法。

In order to improve the main parameters of semiconductor protection device, its theory is introduced simply. After researching the theory of cathode, the characteristics of devices are discussed through changing the process parameters and configuration parameters. Some ways of improving its characteristics is presented.