电泳沉积法制备GaN薄膜的结构和组分分析

Preparation and structural properties of GaN films grown by electrophoretic deposition technique

采用电泳沉积法在Si(111)衬底上制备出了GaN薄膜。用X射线衍射(XRD)、傅立叶红外吸收(FTIR)谱、X射线光电子能谱(XPS)和扫描电镜(SEM)对样品的结构、组分和形貌进行了分析。结果显示所得样品为六方纤锌矿结构的GaN多晶薄膜。

GaN thin films were prepared on Si（111） suhstrates by eleetrophoretie deposition （EPD） technique. Measurement results by X-ray diffraction （XRD）, Fourier transform infrared （FTIR） spectroscopy and X-ray photoelectron spectroscopy （XPS） indicate that the polycrystalline GaN films with hexagonal wurtzite structure were successfully grown on the Si（111） substrates. The surface morphology of the as-prepared GaN films was examined by scanning electron microscopy （SEM）.