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Spatial distribution of SiCln (n=O-2) in SICl4 plasma measured by mass spectroscopy

Spatial distribution of SiCln (n=O-2) in SICl4 plasma measured by mass spectroscopy
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摘要 For a better understanding of the deposition mechanism of thin films in SiCl4 source gas, we have measured the spatial distributions of SiCln (n=0-2) radicals in SICl4 radio frequency glow discharge plasma utilizing a mass spectrometer equipped with a movable gas sampling apparatus. The experimental results demonstrate that the relative densities of SiCln (n=0-2) radicals have peak values at the position of 10 mm above the powered electrode along the axial direction; the relative densities of the Si and SiCIn (n=1, 2) radicals have peak values at the positions of 27mm and 7 mm away from the axis along the radial direction, respectively. Generally speaking, in the whole SICl4 plasma bulk region, the relative density of Si is one order of magnitude higher than that of SICl, and the relative density of SiCl is several times higher than that of SICl2. This reveals that Si and SiCl may be the primary growth precursors in forming thin films.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2006年第10期2374-2377,共4页 中国物理B(英文版)
关键词 SiCln (n=0-2) neutral radicals spatial distribution mass spectrometric diagnosis 空间分布 质量光谱测定诊断 沉积机制 射电频率
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参考文献13

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