多量子阱中注入载流子的非均匀分布

Non-Uniform Distribution of Injected Carriers in Multiple Quantum Wells

根据多量子阱中注入载流子的输运机制,计算了多量子阱中注入载流子的非均匀分布.引入不均匀度参量Asy来衡量载流子分布的不均匀程度,分析了各种敏感因素对载流子非均匀分布的影响.指出注入载流子分布的非均匀性,随量子阱数、注入电流、量子垒高度的增加而显著增加,随工作温度的升高而减小.

Based on the injected carrier transportation mechanisms in multiple quantum wells （MQW）, non-uniform distribution of injected carriers in MQW was computed numerically. And several parameters, which significantly affect the carrier non-uniform distribution in MQW, were investigated. Results show that with the increase of the number of quantum wells, injected current and quantum barrier height increases the non-uniformity of carrier distribution in MQW,but with the decrease of working temperature it will also decrease.