高空穴浓度Mg掺杂InGaN外延材料性能的研究

Investigation of high hole concentration Mg-doped InGaN epilayer

采用金属有机物化学气相沉积方法生长得到具有不同Mg掺杂浓度InxGa1-xN(0≤x≤0.3)外延材料样品.对样品的电学特性和光学特性进行了系统的研究.研究发现在固定Mg掺杂浓度下,随In组分的提高,样品空穴浓度显著提高,最高达2.4×1019cm-3,Mg的活化效率提高了近两个数量级;通过对Mg掺杂InGaN(InGaNMg)样品的光致发光(PL)谱的分析,解释了InGaNMg样品的载流子跃迁机理,并确定了样品中Mg受主激活能和深施主能级的位置.

We investigated the optical and electrical properties of Mg-doped In, Ga1-xN （0 ≤ x ≤ 0.3） grown by metalorganic chemical vapor deposition with different In and Mg contents. When the Mg doping concentration was fixed, the hole concentration of samples increased remarkably with the elevation of In mole fraction. The highest hole concentration achieved was 2.4 x 1019 cm-3 , the doping efficiency increased nearly by two orders. We explained the carrier transition mechanism with the help of the photoluminesce spectra. In addition, we obtained the activation energy of Mg and the band position of deep donor in InGaN ： Mg samples.