Nb和Co掺杂对PZT铁电薄膜电性能的影响

Effect of Co and Nb Doping on Electrical Properties of PZT Ferroelectric Thin Films

用Sol-Gel法在ITO玻璃衬底上制备了不同比例Nb和Co掺杂的PZT铁电薄膜,薄膜呈以(1 0 1)为首要方向的多晶结构.测试结果表明:Co掺杂的PZT薄膜的剩余极化、矫顽场、介电常数和漏电流密度均大于PZT薄膜的相应值,但在1 mol%到10 mol%Nb掺杂范围内漏电流密度随着Nb掺杂比例的增加而减小,薄膜的剩余极化强度和介电常数也有所减小.

PZT thin films with different proportions of Nb and Co dopants have been fabricated on ITO glass substrates by the sol-gel method. The films are polycrystalline with （ 1 0 1 ）-preferred orientation. It is found that the Co-doped PZT films have higher Pr values, higher EC values, larger dielectric constant （at I K Hz） and larger leakage current density than PZT films. But the leakage current density decreases with the in- creasing proportions of Nb dopants, and the Pr values and dielectric constant also decrease.