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制备态FeZrBNi/Ag/FeZrBNi三层膜的巨磁阻抗效应 被引量:3

GIANT MAGNETO-IMPEDANCE EFFECTS OF AS DEPOSITED FeZrBNi SANDWICHED FILMS
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摘要 用射频溅射法在单晶硅衬底上制备了FeZrBNi/Ag/ReZrBNi三层膜,对制备态样品进行了磁阻抗测量.结果表明,样品纵向和横向的最大磁阻抗比分别为18%和31%,取得最大阻抗比的频率分别为7和8MHz;在此频率下,样品的纵向和横向相对磁导率比分别达到153%和5117%.这表明掺Ni的FeZrB三层膜在制备态已具备优异的巨磁阻抗效应和软磁性能.同时还分析了薄膜样品的电阻、电抗分量和有效磁导率随频率的变化关系. Giant magneto-impedance (GMI) effects of FeZrBNi/Ag/FeZrBNi sandwiched films prepared by radio frequency sputtering on the substrate of single crystal Si have been measured. The maximum GMI ratios are 18% and 31% in longitudinal and transverse fields at 7 MHz and 8 MHz, respectively. Corresponding, the maximum effective susceptibility ratios are 153% (at 7 MHz) and 5117% (at 8 MHz) for longitudinal and transverse cases, respectively, indicating that the as-deposited FeZrBNi/Ag/FeZrBNi films have good soft magnetic properties and GMI effect.
出处 《金属学报》 SCIE EI CAS CSCD 北大核心 2006年第9期971-973,共3页 Acta Metallurgica Sinica
基金 国家重点基础研究发展规划资助项目G2001CB610603
关键词 巨磁阻抗效应 FeZrBNi三层膜 掺杂 giant magneto-impedance (GMI) effect, FeZrBNi sandwiched film, doping
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