摘要
Ta/NiFe/Bi(Ag, Cu)/FeMn/Ta and Ta/ NiFeⅠ /FeMn/Bi(Ag, Cu)/NiFeⅡ/Ta films were prepared by magnetic sputtering. The texture of films was examined by X-ray diffraction (XRD). The depend-ence of the Hex1 between NiFeⅠ/FeMn films and the Hex2 between FeMn/NiFeⅡ on the Bi, Ag and Cu thickness was studied in Ta/NiFeⅠ/FeMn/Bi(Ag, Cu)/ NiFeⅡ/Ta. The experimental results show that the He1 ranged from 130 to 140 Oe with an increase in the nonmagnetic metal spacer thickness. The Hex2 de-creased dramatically and became flat finally with the increase of the Bi, Ag and Cu thickness. XPS results show that Bi, Ag and Cu atoms do not stay entirely at the interface of FeMn/NiFeⅡ film; they are at least partly segregated to the surface of NiFe film. The more Bi, Ag and Cu atoms are deposited, the more they are segregated at the NiFe layer.
Abstract Ta/NiFe/Bi（Ag, Cu）/FeMn/Ta and Ta/ NiFedFeMn/Bi（Ag, Cu）/NiFeⅡ/Ta films were prepared by magnetic sputtering. The texture of films was examined by X-ray diffraction （XRD）. The dependence of the Hexl between NiFeⅠ/FeMn films and the Hex2 between FeMn/NiFeⅡ on the Bi, Ag and Cu thickness was studied in Ta/NiFeⅠ/FeMn/Bi（Ag, Cu）/ NiFeⅡ/Ta. The experimental results show that the Hθ1 ranged from 130 to 140 Oe with an increase in the nonmagnetic metal spacer thickness. The Hox2 decreased dramatically and became flat finally with the increase of the Bi, Ag and Cu thickness. XPS results show that Bi, Ag and Cu atoms do not stay entirely at the interface of FeMn/NiFeⅡ film; they are at least partly segregated to the surface of NiFe film. The more Bi, Ag and Cu atoms are deposited, the more they are segregated at the NiFe layer.
基金
the National Natural Science Foundations of China （Grant No. 50471093）
China Postdoctoral Science Foundation （No. 2005037580）.
