摘要
用最新发表的ＨｇＣｄＴｅ材料的光学常数对ＭＢＥ工艺生长的ＨｇＣｄＴｅ／ＣｄＴｅ／ＧａＡｓ材料的透射光谱进行了理论计算．对受生长工艺破坏的衬底背面再次进行抛光处理，消除因表面不平整引起的漫反射效应，使实验测量得到的光谱曲线与理论计算结果很好地吻合，由此得到的ＨｇＣｄＴｅ和ＣｄＴｅ外延层的厚度和解理面上用显微镜测量的数值相同，准确度优于±０．２μｍ．确定ＨｇＣｄＴｅ组分的准确度优于±０．
The optical constants published recently of HgCdTe were used for the calculation of the infrared transminssion spectra of MBE grown HgCdTe/CdTe/GaAs structures. After the damaged backside surfaces of the substrate were carefully polished once again to eliminate diffuse reflection effect,the experimental curves of the infrared transmission spectra can be quantitatively reproduced by the theoretical calculation. The epilayer thicknesses of HgCdTe and CdTe determined by a computer fitting procedure were consistent with that by optic microscope observation. The precision of the thickness deduced by the present method is better than ±0.2μm,and the precision of the composition is better than ±0.0025.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1996年第5期327-332,共6页
Journal of Infrared and Millimeter Waves
基金
国家863高技术基金
