摘要
采用氧化和析出的方法在氧化硅中凝聚生成锗纳米晶体量子点结构。对比了在长时间高温退火氧化条件下和在短时间低温退火用激光照射氧化条件下所生成的锗纳米晶体结构的PL光谱和对应的锗纳米晶体团簇的尺寸分布。为了解释605nm波长处的很强的光致发光峰,在Ge纳晶团簇与S iO2的界面处建立起三能级受激光致发光模型。这为锗的集成激光元器件的开发提供了一条新思路。
We report the investigation on the oxidation behavior of Si1-xGex alloys （ x = 0.05, 0.15, and 0.25 ）. In the PL spectra of germanium quantum dots formed by the oxidation of Si1-xGex substrate, under high oxidation temperature （800℃） an emission band from 650nm to 950nm wavelength would originate from the diameter distribution of germanium nanoparticles （ Ge dusters diameter： 3.7nm- 6nm） ; and under low oxidation temperature （300℃） with laser beam radiation, there is an emission band from 550nm to 800nm wavelength which may come from the germanium clusters （diameter： 2.8nm-4.5nm）. At 605nm wavelength there is an emission peak which comes from the interface between the germanium cluster and the oxide. We propose a new model of three energy levels from the interface （TEI） for explaining the PL peak.
出处
《贵州科学》
2006年第3期5-8,共4页
Guizhou Science
基金
国家自然科学基金资助项目
