期刊文献+

梯度多层BST薄膜介电性能研究 被引量:3

Dielectric Properties of Compositionally-graded and Multilayered BST Thin Films
下载PDF
导出
摘要 成分梯度多层钛酸锶钡薄膜具有较好的综合介电性能,包括适中的介电常数、高的介电调谐率、低的介质损耗及低的介电温度系数等,日益成为微波调制器件如移相器、滤波器、谐振器等的重要候选薄膜材料。就国内外近年来取得的重要成果进行了综述,对今后成分梯度多层BST薄膜的研究前景及方向进行了展望。 Compositionally-graded and multilayered Ba1-xSrxTiO3 thin films have exhibited and/or will exhibit excellent dielectric properties such as moderate dielectric constant, high dielectric tunability, low dielectric loss, low dielectric-temperature coefficient, etc. They have been considered to be increasingly important candidates for tunable microwave devices including phase shifters, filters, oscillators, etc. In this paper, some important results have been reviewed. The prospective research on directions of compositionally-graded and multilayered model of BST thin films in the future are prospected.
出处 《电子元件与材料》 CAS CSCD 北大核心 2006年第10期10-12,共3页 Electronic Components And Materials
基金 电子科技大学青年基金资助项目(L08010301JX05016)
关键词 无机非金属材料 成分梯度 综述 多层膜 钛酸锶钡薄膜 介电性能 微波调制器件 inorganic non-metallic materials compositionally-graded review multilayered BST films dielectric properties tunable microwave device
  • 相关文献

参考文献26

  • 1Sengupta L C. Ceramic ferroeleetric composite material-BSTO-magnesium based compound [P]. US-563534, 1997, 6.
  • 2Chiu-L H.Ceramic ferroelectric Composite materials with enhanced electric properties BSTO-Mg based compound-rare earth oxide [P].US-6074971,2000, 6.
  • 3Cole M W, Joshi P C, Ervin M H. La doped Ba1-xSrxTiO3 thin films for tunable device applications [J]. J Appl Phys, 2001, 89(11): 6336-6340.
  • 4Liang R H, Dong X L, Chcn Y, et al. Effect of La2O3 doping on the tunable and dielectric properties of BST/MgO composite for microwave tunable application [J]. Mater Chem Phys, 2006, 95: 222-228.
  • 5Chong K B, Kong L B, Chen L F, et al. Improvement of dieleemc loss tangent of Al2O3 doped Ba0.5Sr0.5TiO3 thin films for tunable microwave devices [J]. J Appl Phys, 2004, 95(3): 1416-1419.
  • 6Ahn K H,Baik S, Kim S s. Significant suppression of leakage current in(Ba,Sr)TiO3 thin films by Ni or Mn doping [J]. J Appl Phys, 2002, 92 (5):2651 - 2654.
  • 7Liang C S, Wu J M. Electrical properties of W-doped (Ba0.5Sr0.5)TiO3 thin films [J]. J Crystal Growth, 2005, 274: 173- 177.
  • 8Wang S Y, Cheng B L, Can Wang, et al. Reduction of leakage current by Co doping in Pt/Ba0.5Sr0.5TiO3/Nb-SrTiO3 capacitor [J]. Appl Phys Lett,2004, 84 (20): 4116-4118.
  • 9Im Jaemo, Auciello O, Baumann P K, et al. Composition control of magnetron sputter deposited thin films for voltage tunable devices [J].Appl Phys Lett, 2000, 76 (5): 625-627.
  • 10Im Jaemo, Auciello O, Streiffer S K. Layered (BaxSr1-x)Ti1+yO3+z thin films for high frequency tunable devices [J]. Thin Solid Films, 2002, 413: 243-247.

同被引文献22

  • 1肖定全.薄膜物理及其应用讲座第六讲铁电薄膜的物理性能和应用[J].物理,1995,24(7):433-438. 被引量:13
  • 2Kumar A,Manavalan S G.Dielectric and structure properties of pulsed laser deposition and sputtered barium strontium titanate thin films[J].Materials Science and Engineering B,2007,139(2/3):177-185.
  • 3Hashimoto,Kazuhiko,Xu H,et al.Simonolithic micro-bolometers of ferroelectric BST thin films combined with readout FET for uncooled infrared image sensor[J].Sensors and Actuators A:Physical 2001,88(1):10-19.
  • 4Liao J X,Yang C R,Zhang J H.The interfacial structures of (Ba,Sr)TiO3 films deposited by radio frequency magnetron sputtering[J].Applied Surface,2006,252(20):7407-7417.
  • 5KIM W J, CHANG W, QADRI S B; et al. Microwave properties of tetragonally distorted (Bao.sSro.5)TiO3 thin films [J]. Appl Phys Lett, 2000, 76(9): 1185-1187.
  • 6IM J, AUCIELLO O, BAUMANN P K, et al. Composition control of magnetron-sputter-deposited (BaxSrl-x)TiyO33+2 thin films for voltage tunable devices [J]. Appl Phys Lett, 2000, 76(5): 625-627.
  • 7COLE M W, NOTHWANG W D, HUBBARD C, et al. Low dielectric loss and enhanced tunability of Ba0.6Sr0.4TiO3 based thin films via material compositional design and optimized film processing methods [J]. J Appl Phys, 2003, 93(11): 9218-9225.
  • 8YANG L H, WANG G S, DONG X L, et al. Improved dielectric properties of Bit.sZnt.oNbl.5OT/(lll)-oriented Bao.6Sro.4TiO3 bilayered films for tunable microwave applications [J]. J Am Ceram Soc, 2010, 93(5): 1215-1217.
  • 9SIGMAN J, CLEM P G, NORDQUIST C D, et al. Effect of microstructure on the dielectric properties of compositionally graded (Ba, Sr)TiO3 films [J]. J Appl Phys, 2007, 102 (Ⅱ): 054106-054109.
  • 10ZHONG S, ALPAY S P, COLE M W, et al. Highly tunable and temperature insensitive multilayer barium strontium titanate films [J]. Appl Phys Lett, 2007, 90(9): 092901-092906.

引证文献3

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部