射频等离子体增强非平衡磁控溅射沉积技术

Thin film deposition by ICP-enhanced nonequilibrium magnetron sputtering process

介绍了射频电感耦合等离子体增强非平衡磁控溅射沉积技术的原理、实验性能。并用该技术在Si基片上沉积了Cu膜，研究了所成膜的结构、表面形貌及膜成分等，分析结果表明在该条件下沉积的Cu膜致密，晶粒尺度大约在100～1000nm，膜基界面比较紧密，没有明显的空洞，并且膜呈（111）织构。最后简要介绍了该技术应用的前景。

Describes the principle and characteristics of HF Inductance Coupling Plasma（ICP） enhanced nonequilibrium magnetron sputtering process for thin film deposition. Cu films are deposited on Si substrates through the process, and their structure, surface morphology and composition are analyzed by means of XRD, SEM and electron scan spectrometry. The results show that the films deposited are compact, of which the grain size is about 100- 1000 nm, and present （111） texture with tight interface between film and substrate without obvious voids. Introduces briefly the outlook for the application of this technology.