金刚石晶体和薄膜在基底边缘的生长特性

GROWING PROPERTIES OF THE DIAMOND CRYSTALS AND THE POLYCRYSTALLINE FILMS ON THE EDGES OF SUBSTRATE

利用热解化学汽相沉积技术在硅基底的边缘生长出优异的金刚石晶体和薄膜。研究表明：金刚石晶粒在基底边缘的成核密度和生长率比基底表面的大得多，品质更好。但金刚石晶粒的边棱与基底边棱不一致。边核上的金刚石薄膜，虽然与基底表面的薄膜一样粗糙不平，由于薄膜的边棱变得平缓，二次成核的密度及其生长速率却更小。因此边缘上的薄膜更薄。

Abstract:The diamond crystals and the polycrystalline films have been produced on the edges of substrate by pytolytic chemical vapor deposition with the acetone/hydrogen gas. A study shown that on the edges of substrate nucleation and growth of diamond crystals were more rapid, crystallgraphic properties were better. But the edges of diamond crystals were not parallel to the edges of substrate. Contrast to diamond crystals, nucleation and growth of diamond thin film on the substrate edges became slower, the thickness of diamond film on the edges was thinner, although diamond film on the edges was the same crude and unfat as that on the surface. The seconde nucleation density and growth rate were less. So then the film on the edges was thinner.