摘要
本文用扫描电子显微镜（SEM）和微区能港分析（ELS）研究了Nb掺杂浓度对多孔BaTiO3陶瓷显微结构及半导化性能的影响；对Nb掺杂浓度在半导化组分附近的样品中产生的半导化不均匀现象进行研究，认为产生这种现象的主要原因是由于样品中的Nb元素在烧成过程中通过表面向外界扩散引起的。
The effect of amount of Niobium dopant on microstructure and semiconductingproperties of porous BaTiO3 ceramics were studied by SEM and ELS. The semiconductionnon-uniformity found in ceramics samples nearby the semiconducting composition was inves-tigated. It is deemed that the semiconduction non-uniformity is caused by diffusion of Nb dur-ing sinting peiod of the ceramic samples.
出处
《山东陶瓷》
CAS
1996年第3期3-7,共5页
Shandong Ceramics
关键词
钛酸钡
半导体陶瓷
掺杂
显微结构
陶瓷
Barium Titanate Semiconducting Ceramic Donor Dopant Microstructure
