数模/模数转换器和大容量存储器件γ射线辐射试验研究

Radiation effect test on ADC/DAC and high density memory devices with ^(60)Co γ-rays

构建了一个测试平台,在计算机和辅助测试模块的配合下,对信号处理模块经常用到的数模/模数转换器AD10465和AD9857以及大容量FLASH存储器、反熔丝PROM存储器进行了γ射线辐射试验,并以功能的正常性为测试标准对这些器件的抗辐射效应性能进行了评估。结果发现,AD10465和AD9857在总剂量为1.59kGy时仍然功能正常,FLASH存储器和反熔丝存储器分别在总剂量为0.13kGy和0.99kGy时出现错误。

A test platform was constructed for 60^Co γ-ray irradiation experiment of microelectronics, with the aid of computer and a FPGA module. The tested sample devices included analog-to-digital converter AD10465, digital-to-analog converter AD9857, high density flash memory MEF64M16 and anti-fused PROM XQR17V16, which are used in signal processing module in spaceborne systems. Evaluations were made on their ability of resisting the total dose based on the proper function criterion of the devices. The results showed that AD10465 and AD9857 ran properly after 1.59kGy（Si） irradiation, but errors were found when MEF64M16 and XQR17V16＇s total ionizing doze is 0.13kGy（Si） and 0.99kGy（Si）, respectively.