多热源合成SiC冶炼炉温度场的动态数值模拟

Dynamic numerical simulation of temperature field in multi-heat-source synthesis silicon carbide furnace

根据多热源工业生产S iC冶炼炉温度场具有平面非稳态导热的特点,建立了冶炼炉内温度变化的动态数学模型,采用数值计算方法,动态模拟了炉料的升温合成反应及传热过程,获得了冶炼炉内温度分布及其动态变化规律,得到了四热源炉合成S iC的供电时间为60h左右,这一结果应用工业试验进行了验证。应用同样方法,可以获得表面负荷、炉芯尺寸等工艺参数,可以为工业生产S iC提供理论指导。

According to the characteristic that the temperature field of multi - heat - source SiC synthesis furnace is plane and instantaneous, dynamic mathematical model for temperature change of SiC multi - heat - source furnace is performed. By the numericalmethod, dynamically simulation of temperature, reaction of material and the process of heat and quality transferring, temperature distribution and dynamical change rule are achieved. Further more, power supplying time for synthesis SiC is obtained to be about 60h in the four - heating - source furnace. This result is verified in industrial tests. In the same way,other technical parameters （for example the size of furnace or the space between each heat- source） can be forecasted in advance.