摘要
A 65. 8-μm dense doped lanthanum gallate La0.8Sr0.2 Ga0.85 Mg0.15 O2.825（LSGM）film was prepared on a porous Ni/SDC（samarium doped ceria, Ce0.8Sm0.2O1.9 ） anode support by colloid susponsion deposition with incomplete crystallization LSGM powder as a starting material. The phase composition and micromorphology of the LSGM film were characterized by X-ray diffraction and scanning electron microscopy. The electrical properties of the LSGM film and the performances of the LSGM film solid oxide fuel cell were also analyzed. The results show that beth the dense LSGM film on the porous anode support, and the required phase composition of the LSGM film were obtained simultaneously by sintering at 1400 ℃ for 6 h. The adhesion between the LSGM film and the porous anode support is very strong. The electrical conductivities of the LSGM film on the porous anode support are 0. 113 and 0. 173 S/cm at 800 and 850℃, respectively. The maximum output power density of the LSGM film cell is 177 mW/cm^2 at 700℃.
A 65. 8-μm dense doped lanthanum gallate La0.8Sr0.2 Ga0.85 Mg0.15 O2.825（LSGM）film was prepared on a porous Ni/SDC（samarium doped ceria, Ce0.8Sm0.2O1.9 ） anode support by colloid susponsion deposition with incomplete crystallization LSGM powder as a starting material. The phase composition and micromorphology of the LSGM film were characterized by X-ray diffraction and scanning electron microscopy. The electrical properties of the LSGM film and the performances of the LSGM film solid oxide fuel cell were also analyzed. The results show that beth the dense LSGM film on the porous anode support, and the required phase composition of the LSGM film were obtained simultaneously by sintering at 1400 ℃ for 6 h. The adhesion between the LSGM film and the porous anode support is very strong. The electrical conductivities of the LSGM film on the porous anode support are 0. 113 and 0. 173 S/cm at 800 and 850℃, respectively. The maximum output power density of the LSGM film cell is 177 mW/cm^2 at 700℃.
基金
Supported by Jilin Province Department of Science and Technology(No. 20000322).
