摘要
硅微压力传感器的主要研究方向之一是硅微微压传感器。分析了已经商业化的压阻式、电容式、谐振式三类典型的硅微压力传感器各自优缺点，回顾了它们的微压化进展，并在此基础上确定了硅微超微压传感器（0～100Pa）的电容式结构形式。针对其研究过程中存在的主要难点，提出了双差动结构模型，即机械与电路部分均采用差动结构，对其研究前景做了展望。
One of the main research topics of silicon pressure sensor is silicon ultra-low-pressure sensor. Based on the analysis of advantages and disadvantages of piezoresistive, capacitive and resonant pressure sensors and review of their low-pressure-orientation research progresses, capacitive model for the preliminary prototype of silicon ultralow-pressure sensor（0- 100 Pa）is determined . Aiming at the main research difficult point, dual-differential structure, that is both mechanical and electronic structures are differential, is proposed and its research prospect is evaluated.
出处
《传感器与微系统》
CSCD
北大核心
2006年第9期12-14,共3页
Transducer and Microsystem Technologies
基金
浙江省科技攻关计划资助项目(2005C31048)
关键词
硅微超微压传感器
电容式
双差动结构
silicon ultra-low-pressure sensor
capacitive model
dual-differential structure
