摘要
建立了氧化钒热敏薄膜微测辐射热计的PSPICE模型，结合一个具体的CMOS读出电路给出探测器的等效电路模型，分析了探测器的电学和噪声特性，根据等效模型基于微测辐射热计电阻Ro和读出电路MOS沟道宽度2个设计参数对噪声等效温差（NETD）进行了优化，优化数据表明：参数Ro取值为2～11kΩ，W取值为0、1～1．0μm时，得到的NETD值为0、1334～0．1885K。
A PSPICE model for vanadium oxide microbolometer is presented. On the basis of this model combining with a CMOS readout circuit, a equivalent circuit model of infrared detector is established. The electricity and noise characteristics of the model are analysed. Finally noise equivalent temperature different （NETD） is optimized based on two important design parameters;microbolometer resistance RD and MOS channel width W. The optimized data shows that when Ro is chosen from 2 - 11 kΩ and IV is chosen from 0.1 - 1.0 μm, NETD is realized between 0.133 4 - 0, 188 5 K.
出处
《传感器与微系统》
CSCD
北大核心
2006年第9期49-51,54,共4页
Transducer and Microsystem Technologies
基金
国防科学重点实验室基金资助项目(00JS11.4.3.D20213)
关键词
氧化钒
红外探测器
集成电路专用个人仿真程序
噪声等效温差
优化设计
vanadium oxide
infrared detector
personal simulation program with integrated circuit emphasis（PSPICE）
noise equivalent temperature difference（NETD）
design optimization
