CoFe_2O_4纳米线阵列的制备与性能表征

Fabrication and Properties of CoFe_2O_4 Nanowire Arrays

采用Sol-gel法在孔径分别为50 nm和200 nm的AAO模板中制备高度有序的CoFe2O4纳米线阵列。用SEM、TEM和HRTEM对纳米线阵列的形貌和结构进行了表征。对钴铁氧体纳米线阵列进行磁性能研究,结果表明,CoFe2O4纳米线阵列没有择优取向性,但直径为50 nm的钴铁氧体纳米线阵列的矫顽力大于直径为200 nm的钴铁氧体纳米线的矫顽力,这是由于AAO模板的纳米孔道对材料的限域效应引起的。

Highly ordered CoFe2O4 nanowire arrays were prepared in anodic aluminum oxide （AAO） templates with two diameters （50 nm and 200 nm） by Sol-gel method. The scanning electron microscope （SEM）, transmission electron microscope （TEM） and high-resolution transmission electron microscope （HRTEM） were used to characterize the structures of the nanowire arrays. The hysteresis loops of the CoFe2O4 nanowire arrays reveal that there was no preferential magnetic orientation in both of the nanowire arrays with different diameters. The measured eoereivity of CoFe2O4 nanowire arrays with smaller diameter （50 nm） was larger than that of the nanowire arrays with bigger diameter （200 nm）. The possible explanation for this behavior was given.