硅场发射微尖阵列的制备工艺研究

Research on Fabrication of Silicon Field Emitter Arrays

主要阐述了用于场发射硅锥阵列的制备工艺,实验中在101.6mm(4in)的n型(100)晶向低阻硅片上氧化出一层厚度约为650nm的氧化层,再用投影曝光的方法光刻出边长2μm,间距4μm的方形掩膜。再分别使用反应离子刻蚀(RIE)技术和湿法刻蚀制备硅锥阵列,干法刻蚀并结合氧化削尖工艺得到了曲率半径为90nm左右且具有良好一致性的尖锥,湿法刻蚀同样得到较理想的结果。

This paper is mainly about the fabrication of field emitter arrays, In experiment 650nm SiO2 layer was thermally oxidized on a 4 inch n （100） single crystal silicon wafer, the 2um square and 6um pitch distance mask dots pattern by projection photolithography method, then emitter arrays was fabricated by RIE and wet etching process, during dry etching and oxide sharping process, a curve radius of 90nm emitter arrays were made ,In wet etching process also have a good result.