期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

GaN HFET的沟道夹断特性和强电场下的电流崩塌 被引量：1

Pinch-Off Behavior of Channel in GaN HFET and Current Collapse at High Electric Field
下载PDF
导出
摘要 从自洽求解二维泊松方程和薛定谔方程出发,研究了纵、横向电场作用下GaNHFET沟道中的电子态和夹断特性。建立了不同异质结构和电场梯度下的电荷控制模型;运用热电子隧穿电流崩塌模型解释了强场电流崩塌的实验结果;强调了沟道夹断特性对电流崩塌的影响;研究了背势垒异质结构、场板电极和挖槽等抑制电流崩塌的方案,提出利用挖槽独立设计内、外沟道异质结构抑制强场电流崩塌的新思路。 From the self-consistent solution of 2-D Poisson equation and Schroedinger equation, the electron states and pinch-off behavior in quantum well channel of GaN HFET under longitudinal and transversal electric field were investigated. A charge controlling model for different heterostructures and electric field gradients was established. By using the hot electron tunneling mechanism of current collapse, some experimental results about current collapse under high electric field were explained. The effect of pinch-off characteristic on current collapse was emphasized. The back barrier heterostructure, field plate structure and recessed gate were studied to reduce the current collapse. A new approach to design independently inner and outer channel taking advantage of recessed gate technology was proposed.
作者 薛舫时 陈堂胜
机构地区 南京电子器件研究所单片集成电路与模块国家级重点实验室
出处 《微纳电子技术》 CAS 2006年第10期453-460,469,共9页 Micronanoelectronic Technology
基金 科技预研基金资助项目(51327010202)
关键词 电流崩塌 夹断特性 电荷控制模型 短沟道效应 current collapse pinch-off behavior charge controlling model short channel effect
分类号 TN325.3 [电子电信—物理电子学] TN386 [电子电信—物理电子学]
  • 相关文献

参考文献25

  • 1ANDO Y, OKAMOTO Y, MIYAMOTO H, et ol. 10-W/mm AlGaN-GaN HFET with a field modulating plate [J] . IEEE Electron Device Lett, 2003, 24 (5): 289.
  • 2OKAMOTO Y, ANDO Y, HATAYA K. 96 W AlGaN/GaN heterojunction FET with field-modulating plate [J] . Electronics Lett, 2003, 39 (20): 1474.
  • 3WU Y F, SAXLER A, MOORE M, et al. 30-W/mm GaN HEMTs by field plane optimization [J] . IEEE Electron Device Lett, 2004, 25 (3): 117.
  • 4THOMPSON R, PRUNTY T, KAPER V. Performance of the AlGaN HEMT structure with a gate extension [J]. IEEE Tran Electron Devices, 2004, 51 (2): 292.
  • 5SUN Y, EASTMAN L F. Large-signal performance of deep submicrometer AlGaN/AlN/GaN HEMTs with a field-modulating plate [J]. IEEE Tran Electron Devices, 2004, 52 (8): 1689.
  • 6WU Y F, MOORE M, SAXLER A, et al. 8-Watt GaN HEMTs at millimeter-wave frequencies [C]//IEDM Technical Digest, 2005: 583-585.
  • 7WU Y F, MOORE M, WISLEDER T, et al. High-gain microwave GaN HEMTs with source-terminated field-plates [C] //IEDM Technical Digest, San Francisco, 2004: 1078-1079.
  • 8OKAMOTO Y, ANDO Y, NAKAYAWA T, et al. High-power recessed-gate AlGaN-GaN HFET with a field-modulating plate [J] . IEEE Tran Electron Devices, 2004, 51 (12): 2217.
  • 9CHINI A, BUTTARI D, COFFIE R, et ol. Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs [J] . IEEE Electron Deviee Lett, 2004, 25 (5): 229.
  • 10MOON J S, WU S, WONG D, et al. Gate-recessed AlGaN- GaN HEMTs for highperformance millimeter-wave applications [J] . IEEE Electron Device Lett, 2005, 26 (6): 348.

二级参考文献50

  • 1薛舫时.GaN异质结的二维表面态[J].Journal of Semiconductors,2005,26(10):1939-1944. 被引量：8
  • 2Behn U,Thamm A,Brandt O,et al.Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy.J Appl Phys,2000,87(9):4315.
  • 3Hashizume T,Ootomo S,Oyama S,et al.Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures.J Vac Sci Technol,2001,B19(4):1675.
  • 4Kalinina E V,Kuznetsov N I,DiMitriev,et al.Schottky barriers on n-GaN grown on SiC.J Electron Mater,1996,25(5):831.
  • 5Nguyen C,Nguyen N X,Grider D E.Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies.Electron Lett,1999,35(16):1380.
  • 6Klein P B,Binari S C,Ikossi-Anastasiou K,et al.Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors.Electron Lett,2001,37(10):661.
  • 7Klein P B,Binari S C,Kossi K,et al.Current collapse and the role of carbon in A1GaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy.Appl Phys Lett,2001,79(21):3527.
  • 8Hasegawa H,Inagaki T,Ootomo S,et al.Mechanisms of collapse and gate leakage currents in A1GaN/GaN heterostructure field effect transistors.J Vac Sci Technol,2003,21(4):1844.
  • 9Auret F D,Goodman S A,Koschnick F K,et al.Sputter deposition-induced electron traps in epitaxially grown n-GaN.Appl Phys Lett,1999,74(15):2173.
  • 10Fang Z Q,Look D C,Visconti P,et al.Deep centers in a freestanding GaN layer.Appl Phys Lett,2001,78(15):2178.

共引文献10

同被引文献15

  • 1薛舫时.GaN HFET沟道热电子隧穿电流崩塌模型[J].Journal of Semiconductors,2005,26(11):2143-2148. 被引量：7
  • 2Kumar V, Kuliev A, Tanaka T, et al. High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate[J]. Electron Lett, 2003,39 (24) : 1758- 1760.
  • 3Okamoto Y, Ando Y, Nakayama T, et al. High-power recessed-gate AlGaN-GaN HFET with a field-mod- ulating plate [J]. IEEE Electron Devices, 2004, 51 (12) : 2217-2222.
  • 4Moon J S, Wu Shihchang, Wong D, et al. Gate-recessed AIGaN-GaN HEMTs for High performance millimeter-wave applications [J]. IEEE Electron Device Lett, 2005,26(6):348-350.
  • 5Nakayama T, Ando Y, Okarnoto Y, et al. CW 140 W recessed-gate AIGaN/GaN MISFET with field-modulating plate[J]. Electron Lett, 2006,42(8):489-490.
  • 6Cai Y, Zhou Y, Chen K J, et al. High-performance enhancement-mode AIGaN/GaN HEMTs using fluoride-based plasma treatment [J]. IEEE Electron Device Lett, 2005,26(7) :435-437.
  • 7Wang R, Cai Y, Tang W. Planar integration of E/D- mode AlGaN/GaN HEMTs using fluoride-based plasma treatment[J]. IEEE Electron Device Lett, 2006, 27(8):633-635.
  • 8Cai Y, Zhou Y, Lau K M, et al. Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment., from depletion mode to enhancement mode[J]. IEEE Electron Devices, 2006,53(9): 2207-2215.
  • 9Shen L, Palacios T, Poblenz C, et al. Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment[J]. IEEE Electron Device Lett, 2006,27(4):214-216.
  • 10Palacios T, Palacios C S, Chakraborty A, et al. High-performance E-mode AIGaN/GaN HEMTs[J]. IEEE Electron Device Lett, 2006,27(6):428-430.

引证文献1

微纳电子技术
2006年 第10期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部