热处理温度对Ba_(0.5)Sr_(0.5)TiO_3薄膜结构与性能影响的研究

The Influences of Annealed Temperatures on The Properties and Microstructure of Ba_(0.5)Sr_(0.5)TiO_3 Thin Film

采用HPAgilent4294A阻抗分析仪、X衍射、扫描电镜等测试方法研究了热处理温度对BaxSr1-xTiO3(BST)薄膜结构与性能的影响。当升/降温速率为0.5～1℃/min时,得到的薄膜表面均匀、无裂纹、孔洞。经过750℃退火处理后,薄膜的介电性能最佳,即具有较高的相对介电常数和较小的介质损耗。

The influences of annealed temperature on the dielectric properties and microstructure of Ba0. 5Sr0.5TiO3 thin films were studied by means of impedance analyzer Agilent HP 4294A, X - ray diffraction （XRD）, and scan electron microscopy （SEM） . The crystal grains distributed uniformly, and no cracking existed on the surface of thin films at 0.5 to 1 ℃/min of hyperthermic or cooling treatment. The best annealed temperature by the higher dielectric properties of thin films, that is higher dielectric constant （εr）, lower dielectric loss （tanδ）, was 750 %.