摘要
研究了Ti_3SiC_2和Ti在1573K、20MPa压力下的相互联接及界面结构。结果表明在该温度下二者之间可以相互联接并形成反应层,反应层的主要成分是Ti_5Si_3和TiC_x,各层之间有明显的界面存在,在界面两端硅含量的变化十分明显。
The conjunction and interface structure of Ti/Ti3SiC2 composite at 1573 K and 20 MPa is studied. The results show that the chemical reaction layer between Ti and Ti3SiC2 will be formed under above condition and the main phases of the reaction layer consist of Ti5Si3 and TiCx. The content of silicon has an obvious change near the reaction layer.
出处
《热加工工艺》
CSCD
北大核心
2006年第18期9-10,共2页
Hot Working Technology
关键词
TI3SIC2
高温连接
反应层
Ti3SiC2
high temperature conjunction
reaction layer
