强激光辐照下硅材料的温度分布研究

Study of Thermal Distribution of Silicon Materials Irradiated by High Power Laser

激光辐照光电系统极易造成光电探测器件的干扰或破坏。为此研究了连续强激光对半导体材料的辐照效应,应用积分变换的方法,建立了平顶型的连续激光辐照硅材料的二维非稳态温度分布模型。研究发现:圆形平顶激光辐照硅材料靶,激光作用区域内的温度由光斑中心向四周逐渐降低,在作用区域边缘处温度变化比较明显;不同辐照时间下对应的靶材前表面温度的整体分布情况是大致相同的;在一定的激光功率密度和辐照时间条件下,材料靶表面的温升和靶材半径负相关。

Detectors are easy to be disturbed or damaged by laser during optoelectronic countermeasures. Irradiation effect of semiconductor induced by high power CW laser is investigated. With integral-transform method, twodimension transient thermal distribution model of silicon materials irradiated by flat-topping CW laser is established. The research result indicates that when silicon materials is irradiated by circular flat-topping laser, the temperature of lasing area decreases from the facular center to the brim, and hygral change at the lasing area brim is sharp. The integral situation of temperature distribution of silicon materials＇ front surface is approximately identical under the condition of different irradiation times. With given laser power density and irradiation time, the temperature rise of silicon materials＇ front surface is inverse correlation with silicon materials＇ radius.