掺铋钇铁石榴石法拉第效应的增强机理研究

A Study of the Charge Transfer Characteristics of a Si CCD with the Charge Control Method

提出用电荷控制法研究ａ－ＳｉＣＣＤ电荷转移特性的理论模型，通过引入平均场效应迁移率的概念，推导出计算ａ－ＳｉＣＣＤ电荷转移损失率的解析解，理论计算与实验结果符合较好．该模型可以较好地反映热扩散、自感应电场和边缘电场的漂移机制对ａ－ＳｉＣＣＤ电荷转移特性的影响，分析结果表明，ａ－ＳｉＣＣＤ的电荷的转移主要是受电场漂移作用控制．

A theoretical model for the study of the charge transfer characteristics of an a Si CCD using the charge control method approach is proposed. By employing the concept of average field effect mobility, a generalized equation and the analytic solution for the calculation of the charge transfer loss rate of the a Si CCD are derived. Theoretical calculation results are found to be in good agreement with experimental data. The model is capable of showing the effects of the thermal diffusion, the drift of the self induced field and the drift of the boundary field on the charge transfer. It is shown that the charge transfer is mainly dominated by the drift field.