SU-8光刻胶氧刻蚀的研究

Study on Deep Reactive Ion Etching of SU-8 Photoresist

采用氧气反应离子刻蚀(RIE)SU-8光刻胶,以获得三维SU-8微结构(如斜面)。实验采用套刻、溅射、湿法腐蚀、电镀等技术实现光刻胶上镍掩膜图形化。分别研究氧气气压、射频(RF)功率、氧气流量对刻蚀速率的影响,并对实验结果进行了理论分析,在此基础上可进一步优化刻蚀工艺以获得更高的刻蚀速率。

In this paper, deep reactive ion etching of SU-8 photoresist is used to obtain pattern on it （eg： slope）. This method also can be used to wipe off SU-8 photoresist. We utilize a series of positive and negative photoresist lithography ,sputter deposition,wet etching,electroplating ere to pattern on Ni mask in the experiment. We discuss the relation between parameters（O2 pressure,RF power, the flux of O2 ） and etching rate through the experiment data. So we can achieve a quite fast etching rate by confirming the moderate parameters.