摘要
室温下,利用磁控溅射方法在P型Si(100)衬底上沉积了铜(Cu)膜。采用X射线衍射(XRD)和卢瑟福背散射(RBS)分析了未退火以及在不同温度点退火后的样品,研究了Cu.SiO2.Si(100)体系的扩散和界面反应。RBS分析得出:对于Cu.SiO2.Si(100)体系,当退火温度高于350℃时,才产生明显的扩散,并且随着温度的升高,体系扩散越明显;当退火温度在450℃以下时,XRD没有测得铜硅化合物生成;当温度到500℃时才有铜硅化合物生成。这比已有文献报道的温度低。
The Cu thin films were deposited on P-Si（ 100 ） substrates by magnetron sputtering at room temperature. The interface reaction and diffusion of Cu/SiO2/Si （100） systems were studied at different temperatures by X-ray diffraction （ XRD ） and Rutherford backscattering （ RBS ）. The results showed that onset temperature of interdiffusion was 350 ℃ for the Cu/SiO2/Si（100） systems. With the increase of temperature, the interdiffusion was more apparent. There were no copper silicides formed at annealing temperature of 450 ℃ for the Cu/SiO2/Si（ 100 ） systemms. The onset temperature of silicification was 500 ℃, which was lower than that of other literatures reported.
出处
《真空与低温》
2006年第3期137-141,共5页
Vacuum and Cryogenics
基金
国家自然科学基金(10375028)
甘肃省自然科学基金暨中青年科技基金(ZS-031-A25-032-C)
关键词
薄膜
扩散
界面反应
硅化物
thin film
diffusion
Interface reaction
silicides
