新型空穴传输材料N,N′-二(α-萘基)-N,N′-二苯基-4,4′-联萘胺的合成与光电性质

Novel hole-transporting materials: synthesis and photoelectric properties of N,N′-di(α-naphthyl)-N,N′-diphenyl-4,4′-naphthidine

以4,4′-联萘胺为母体,以最常用的空穴传输材料N,N′-二(α-萘基)-N,N′-二苯基-4,4′-联苯胺(α-NPD)为样板,合成了新型空穴传输材料N,N′-二(α-萘基)-N,N′-二苯基-4,4′-联萘胺(α-NPN)。通过核磁共振氢谱和元素分析进行了结构表征。差热分析测定其玻璃化温度(Tg)达到128℃。相对于α-NPD,α-NPN的吸收光谱和光致发光光谱都发生了红移。循环伏安法测定其氧化电势为1.20V,比α-NPD的1.02V稍高。该化合物可发明亮的蓝色荧光(461 nm),积分球测定其薄膜荧光量子效率为8.5%,比α-NPD的5.5%高。初步确定α-NPN可作为有机电致发光空穴传输材料。

With 4,4＇-naphthidine as a parent compound and N, N＇-di （α-naphthyl） - N, N＇-diphenyl - 4,4＇-benzidine （α-NPD） as a model, N, N＇-di （α-naphthyl） - N, N＇-diphenyl - 4,4＇-naphthidine （ α- NPN） was synthesized and characterized by I HNMR and EA. Determined by DSC, α-NPN has a higher glass transition temperature （ Ts = 128℃ ） than that of α-NPD. The absorption and thin film photoluminescence spectra of α-NPN red - shifts relative to those of α-NPD. Its oxidation potential, determined by cyclic voltammetry in solution, is 1.20V, higher than 1.02V of α-NPD. Additionally,α-NPN thin film emits bright blue fluorescence （461 nm） with a quantum efficiency of 8.5%, higher than that of α-NPD （5.5%）. The structure -property analyses prove that ot-NPN potentially serve as a good hole -transport material.