高功率14xxnm半导体激光器

High Power 14xxnm Strained Quantum Well Lasers

高功率14xxnm半导体激光器是光纤Raman放大器的理想泵浦源,它能够提供大功率、宽带输出,而且其动态可调谐,频率稳定性好,成本低。本文详细介绍了高功率14xxnm半导体激光器的材料生长、器件结构和封装工艺,总结了AlGaInAs材料生长的难点和结构方面的改进措施,指出了带有锥形增益区的脊形波导结构是获取高功率、良好远场单模特性的有效途径。本文还报导了国内外高功率14xxnm半导体激光器的最新产品性能和研发状况,指出了国内进一步研制高功率14xxnm激光器的研究难点和重点。

High power 14xxnm strained quantum well lasers are the key devices of the fiber optic Raman amplifiers and rare earth doped fiber amplifiers. They can provide high power and wide band output and have the features of tunable dynamics, good frequency stability and low cost. In this paper, the material growth, device structures and package processing of 14xxnm semiconductor lasers are presented in detail, the difficulties in the growth of A1GaInAs material and the modification of the material structure are summarized and the ridge waveguide structure with a cone gain region which is the most effective approach to obtain good high power far field single-mode characteristics is indicated. The latest product performance and research status of the ：high power 14xxnm semiconductor lasers at home and abroad are reported and the potential difficulties for the further development of high power 14xxnm semiconductor lasers are pointed out.