摘要
以通讯领域的需求和技术发展为背景,介绍了SiGe HBT器件以及SiGe BiCMOS技术的发展历程。总结了SiGe HBT器件在器件结构和工艺步骤上的共同点。以IBM公司0.5μmSiGe BiCMOS为例,介绍了SiGe BiCMOS典型工艺步骤,分析了BDG和BAG两种工艺集成方式在不同技术节点上应用的利弊。最后,以捷智半导体和IBM产品线为例,对SiGe HBT器件以及SiGe BiCMOS技术划分技术节点。
The state-of-the-art and future direction of SiGe BiCMOS technology targeted for applications such as wireless communication are dealt with. The common aspects for device structure and process flow of SiGe HBT＇s are discussed. Based on IBM＇s 0. 5μm SiGe BiCMOS, the integration approach of SiGe BiCMOS is described in detail. Since BAG has deeoupled the thermal budget of SiGe HBT and CMOS, feature size below 0.25μm is becoming more popular. Finally, the roadmap of SiGe BiCMOS is summarized based on product lines of IBM and Jazz Semiconductor.
出处
《微电子学》
CAS
CSCD
北大核心
2006年第5期540-547,共8页
Microelectronics
