摘要
简要介绍了一种用于接收机前端的宽带低噪声放大器(LNA)。该微波单片集成电路(MMIC)蔡用0.35μm SiGe工艺实现,且不需要外部阻抗匹配元件,并利用两级级联拓扑结构实现频带内的低噪声和高线性度。电路版图设计后的仿真结果表明,该放大器工作带宽3.78 GHz,功率增益达到27.5 dB,噪声系数(NF)≤2.26 dB,在1.5 GHz信号频率下,输出功率1 dB压缩点(P1dB)为10 dBm。
An MMIC broadband low-noise amplifier （LNA） for the front-end of receiver systems is briefly described. Implemented in 0.35μm SiGe technology, the microwave monolithic integrated circuit （MMIC） doesn＇t require any external impedance matching components, and in-band low noise figure and high linearity were achieved using two-stage cascadable topology. Results from layout post-simulation show that the LNA circuit has achieved a power gain of 27.5 dB, an operating bandwidth 3.78 GHz, a noise figure （NF） lower than or equal to 2. 26 dB, and a 1 dB compression point of output power （P1dB） of 10 dBm at 1.5 GHz signal frequency.
出处
《微电子学》
CAS
CSCD
北大核心
2006年第5期565-568,共4页
Microelectronics
