摘要
采用MBE差分外延生长SiGe HBT基区,等平面隔离,多晶硅注入、快速退火形成发射区等工艺,实现了SiGe器件的平面集成。基于上述工艺技术研制的SiGe低噪声放大器(LNA),获得了1.7 GHz的带宽,23 dB的增益和3.5 dB的噪声系数。
With isoplanar isolation, processes, an SiGe noise figure of 3. 5 MBE differential epitaxial base, a planar integration of SiGe devices was implemented by using polysilicon implantation, and emitter formation by rapid thermal annealing. Based on these low noise amplifier （LNA）was fabricated, and a bandwidth of 1.7 GHz, a gain of 23 dB, and a dB have been achieved for the circuit.
出处
《微电子学》
CAS
CSCD
北大核心
2006年第5期569-571,594,共4页
Microelectronics
